SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND |
| 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 10.00 AMPERES MAXIMUM BASE CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 80.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND |
| 2 UNTHREADED HOLE |
OVERALL LENGTH | 1.573 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL AND |
| UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL LENGTH | 0.480 INCHES MAXIMUM |
TERMINAL CIRCLE DIAMETER | 0.440 INCHES MAXIMUM |
OVERALL HEIGHT | 0.300 INCHES MAXIMUM |
OVERALL WIDTH | 1.050 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
SPEC/STD CONTROLLING DATA | |
MANUFACTURERS CODE | 81413 |
MFR SOURCE CONTROLLING REFERENCE | 231283-701 |