| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND |
| 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TRANSFER RATIO | 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | LEAD SURFACES GOLD |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |