| BODY HEIGHT | 0.085 INCHES MAXIMUM |
| BODY LENGTH | 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| BODY WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| DESIGN FUNCTION AND QUANTITY | 2 GATE, NAND BUFFER |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND W/RESISTOR AND W/EXPANDER |
| INCLOSURE CONFIGURATION | FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | DUAL 4 INPUT |
| OUTPUT LOGIC FORM | DIODE-TRANSISTOR LOGIC |
| OVERALL WIDTH | 0.490 INCHES MINIMUM AND 0.525 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 250.0 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 14 PIN |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 105.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 105.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 8.0 VOLTS MAXIMUM POWER SOURCE |