| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 250.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 7.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | THREADED STUD ALL TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 1 ALL TRANSISTOR |
| NOMINAL THREAD SIZE | 0.250 INCHES ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG ALL TRANSISTOR |
| OVERALL LENGTH | 1.330 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL WIDTH ACROSS FLATS | 0.667 INCHES MINIMUM AND |
| 0.687 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE GOLD |