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National Stock Number:
5961-00-496-7165
Federal Supply Class:
5961
National Item Identification Number:
004967165
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 12B1681 | 03508 | GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT | | 209011P3 | 94117 | BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. | | SD2856-1 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | S12586 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | SP12586 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | SD2856-1 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND | | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND | | 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION | | INCLOSURE MATERIAL | METAL | | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | MOUNTING METHOD | TERMINAL | | TERMINAL LENGTH | 1.500 INCHES MINIMUM | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD | | OVERALL LENGTH | 0.170 INCHES MINIMUM AND | | 0.210 INCHES MAXIMUM | | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND | | 0.230 INCHES MAXIMUM | | FUNCTION FOR WHICH DESIGNED | AMPLIFIER | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
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