| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 32.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND |
| 32.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 1.00 AMPERES MAXIMUM BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 666.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND |
| 1 CASE |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND |
| 0.450 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |