| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 NOMINAL DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND |
| 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |