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National Stock Number:
5961-00-489-1150
Federal Supply Class:
5961
National Item Identification Number:
004891150
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 2N5629 | 01281 | TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES | | 2N5629 | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | | 2N5629 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N5629 | 07256 | SILICON TRANSISTOR CORP SUB OF BBF INC | | 2N5629 | 1MY79 | INTERSIL COMMUNICATIONS INC. | | 2N5629 | 30043 | SOLID STATE DEVICES, INC | | 2N5629 | 30045 | SOLID POWER CORP | | 2N5629 | 31338 | SEMITRONICS CORP | | 2N5629 | 33178 | MICROSEMI PPC INC | | 2N5629 | 34156 | OSI OPTOELECTRONICS, INC | | 2N5629 | 34371 | RENESAS ELECTRONICS AMERICA INC | | 2N5629 | 52333 | API ELECTRONICS, INC. | | 2N5629 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N5629 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 3011615 | 10001 | NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER | | RELEASE5926 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N5629 | C7191 | ADELCO ELEKTRONIK GMBH | | 2N5629A | C7191 | ADELCO ELEKTRONIK GMBH | | 2N5629 | D6528 | LACON ELECTRONIC GMBH |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.875 INCHES MAXIMUM | | OVERALL LENGTH | 0.450 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING FACILITY QUANTITY | 2 | | MOUNTING METHOD | UNTHREADED HOLE | | POWER RATING PER CHARACTERISTIC | 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | SPECIFICATION/STANDARD DATA | 80131-RELEASE5926 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
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