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National Stock Number: 5961-00-487-8132
Federal Supply Class: 5961
National Item Identification Number: 004878132
Description: TRANSISTOR
Detail: An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
01-1-06-0008-1 | 06132 | DATAPOINT CORP | 026-0010 | 13297 | MAGNASYNC/MOVIOLA CORPORATION | 174-70464-31 | 04773 | GTE COMMUNICATION SYSTEMS CORP | 1853-0295 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. | 1853-0295 | 28480 | HEWLETT-PACKARD COMPANY | 13220E2873 | 97403 | CECOM LR CENTER | 28002832 | 01295 | TEXAS INSTRUMENTS INCORPORATED | 2N4248 | 04713 | FREESCALE SEMICONDUCTOR, INC. | 2N4248 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | 2N4248 | 12040 | NATIONAL SEMICONDUCTOR CORP | 2N4248 | 13715 | FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD | 200022 | 21793 | ASTRONICS TEST SYSTEMS INC | 200088 | 21793 | ASTRONICS TEST SYSTEMS INC | 200258 | 21793 | ASTRONICS TEST SYSTEMS INC | 4901-04-2480 | 23338 | WAVETEK U S INC DIV OF WAVETEK CORP | RELEASE5285 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 2N4248 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | JAN2N4248 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | 2N4248 | 94580 | HONEYWELL INTERNATIONAL INC. | 2N4248 | C7191 | ADELCO ELEKTRONIK GMBH | 2N4248A | C7191 | ADELCO ELEKTRONIK GMBH | 2N4248 | D6528 | LACON ELECTRONIC GMBH |
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Techincal Specification:
CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | FEATURES PROVIDED | HERMETICALLY SEALED CASE | INTERNAL CONFIGURATION | JUNCTION CONTACT | OVERALL DIAMETER | 0.330 INCHES NOMINAL | OVERALL LENGTH | 0.115 INCHES MAXIMUM | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION | MOUNTING METHOD | TERMINAL | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | SEMICONDUCTOR MATERIAL | SILICON | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | SPECIFICATION/STANDARD DATA | 80131-RELEASE5285 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | TERMINAL LENGTH | 0.400 INCHES MINIMUM | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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