COMPONENT NAME AND QUANTITY | 8 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 350.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
FUNCTION FOR WHICH DESIGNED | SWITCHING |
INCLOSURE MATERIAL | CERAMIC OR GLASS OR METAL |
OVERALL HEIGHT | 0.063 INCHES MAXIMUM |
OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
OVERALL WIDTH | 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
MOUNTING METHOD | TERMINAL |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
PRECIOUS MATERIAL | GOLD |
SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 0.165 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 10 RIBBON |