6640-00-436-1000 PAPER,FILTER Index 5961-00-436-1002 TRANSISTOR

National Stock Number:
5961-00-436-1001

Federal Supply Class:
5961

National Item Identification Number:
004361001

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.


Manufacturer Information:
14899421877NORTHROP GRUMMAN SYSTEMS CORPORATION
2N395607688JOINT ELECTRON DEVICE ENGINEERING COUNCIL
2N395612040NATIONAL SEMICONDUCTOR CORP
2N395621845SOLITRON DEVICES, INC.
2N395680131ELECTRONIC INDUSTRIES ASSOCIATION
JAN2N395681349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
RELEASE515780131ELECTRONIC INDUSTRIES ASSOCIATION


Techincal Specification:
COMPONENT NAME AND QUANTITY2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDEDHERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-71
MOUNTING METHODTERMINAL
OVERALL DIAMETER0.230 INCHES MAXIMUM
OVERALL LENGTH0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIALSILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR


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