COMPONENT NAME AND QUANTITY | 2 TRANSISTOR2 TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.335 INCHES MINIMUM AND 0.375 INCHES MAXIMUM0.375 INCHES MAXIMUM |
OVERALL LENGTH | 0.180 INCHES MAXIMUM0.180 INCHES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION |
MOUNTING METHOD | TERMINALTERMINAL |
SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNPALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTORSILICON ALL TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL0.200 INCHES NOMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM1.500 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD |